MEMORY DEVICE

摘要

A memory device is provided to obtain stabilized switching current without having an effect on the degree of integration by arbitrarily controlling the aspect ratio of a memory area and switch region. A memory device comprises a first electrode(11) and a second electrode(14), a memory register(13), and a switch fabric(12). The memory register is formed between the first electrode and the second electrode. The switch fabric controls the current applied to the memory register. The memory area of the memory register and switch region of the switch fabric are different.