| 发明名称 |
PHASE CHANGE MEMORY DEVICE AND METHOD OF FORMING THE SAME |
| 摘要 |
Provided are a phase change memory device and a method for forming the phase change memory device. The method includes forming a phase change material layer by providing reactive radicals to a substrate. The reactive radicals may comprise precursors for a phase change material and nitrogen.
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| 申请公布号 |
US2008308785(A1) |
申请公布日期 |
2008.12.18 |
| 申请号 |
US20080136176 |
申请日期 |
2008.06.10 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK YOUNG-LIM;CHO SUNG-LAE;BAE BYOUNG-JAE;LEE JIN-IL;PARK HYE-YOUNG |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
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代理人 |
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