发明名称 POST-CMP TREATING LIQUID, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING SAME
摘要 PROBLEM TO BE SOLVED: To provide a post-CMP treating liquid capable of efficiently removing sticking substances on a wiring layer and an insulating film surface. SOLUTION: The post-CMP treating liquid includes water, polyphenol, an anionic surfactant, ethylene diamine tetraacetic acid, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. The treating liquid has a pH ranging from 4 to 9, and exhibits a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008305973(A) 申请公布日期 2008.12.18
申请号 JP20070151746 申请日期 2007.06.07
申请人 TOSHIBA CORP 发明人 KURASHIMA NOBUYUKI;MINAMI FUKUGAKU;TATEYAMA YOSHIKUNI;YANO HIROYUKI
分类号 H01L21/304 主分类号 H01L21/304
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