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发明名称
Verfahren zum Ausbilden einer Halbleiterstruktur, insbesondere eines FETs
摘要
申请公布号
DE102006030268(B4)
申请公布日期
2008.12.18
申请号
DE200610030268
申请日期
2006.06.30
申请人
ADVANCED MICRO DEVICES INC.
发明人
WEI, ANDY;KAMMLER, THORSTEN;HOENTSCHEL, JAN;HORSTMANN, MANFRED
分类号
H01L21/336;C30B25/02;H01L21/30;H01L21/306;H01L21/8232
主分类号
H01L21/336
代理机构
代理人
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