| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a power semiconductor device whose controllable currents are large, and whose loss is low. <P>SOLUTION: At least two wide-gap semiconductor layers 1, 2 and 3, having mutually different conductivities, are laminated so that a wide-gap bipolar semiconductor element, having a built-in voltage in the forward characteristics. The wide-gap semiconductor layers 1, 2 and 3 having lamination faults are irradiated with prescribed amount of γ rays, electron beam or charged particle beam of the light of a predetermined irradiation energy. <P>COPYRIGHT: (C)2009,JPO&INPIT |
