| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element in which band discontinuity of an interface between As-based and P-based layers is reduced when the interface is present in order to reduce light emitting element resistance and improve extraction efficiency of light, and to provide a method of manufacturing a semiconductor laminate. SOLUTION: A semiconductor laser diode 10 has an AlGaInAsP bond improving layer 18 having a lattice constant of an intermediate value between those of a p-AlGaInP clad layer 19 as a P-based mixed crystal layer and a p-AlGaAs light guide layer 17 as an As-based mixed crystal layer between those layers. COPYRIGHT: (C)2009,JPO&INPIT
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