| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a single crystal which is capable of stably pulling a single crystal which is completely dislocation-free and good-shaped. SOLUTION: A pulling up process wherein a crystal driving part is operated to dip a seed crystal in a silicon melt 3 and pull up the seed crystal in controlling the crystal driving part and a crucible driving part under specific conditions is carried out. In this pulling up process, a horizontal magnetic field device is driven to apply a horizontal magnetic field to the silicon melt 3 in the crucible 4. The horizontal magnetic field device fixes the magnetic field center line I of the applied magnetic field at a specific position away from the surface 3a of the silicon melt 3. Namely, the position of the horizontal magnetic field device in the vertical direction is controlled in advance by a horizontal magnetic field position controller and the magnetic field center line I of the applied magnetic field is fixed at a position of a specific distance which is 50 mm below the surface 3a of the silicon melt 3 and L or less deep from the surface 3a of the residual silicon melt 3 when the tail is in. COPYRIGHT: (C)2009,JPO&INPIT
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