发明名称 POWER MOSFET CONTACT METALLIZATION
摘要 A structure preferably includes a semiconductor device formed in a substrate; an insulator adjacent to the semiconductor device; an electrical contact electrically coupled to the semiconductor device, wherein the electrical contact preferably includes tungsten; and an electrical connector coupled to the electrical contact, wherein the electrical connector preferably includes aluminum. A surface of the insulator and a surface of the electrical contact preferably form a substantially even surface.
申请公布号 WO2007139681(A9) 申请公布日期 2008.12.18
申请号 WO2007US11377 申请日期 2007.05.11
申请人 VISHAY-SILICONIX;WONG, RONALD;OI, JASON;TERRILL, KYLE;CHEN, KUO-IN 发明人 WONG, RONALD;OI, JASON;TERRILL, KYLE;CHEN, KUO-IN
分类号 H01L21/28 主分类号 H01L21/28
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