| 摘要 |
<p>Apparatus and methods for sputtering are provided, which are useful for sputtering high magnetization Saturation materials. In one embodiment, a plurality of sputtering target arrangements (1a, 1b, 2, 3a, 3b) are arranged concentrically, wherein independent magnetic fields can be generated at least partially above the respective target arrangements. One or several target arrangements can include respective upper (1a, 3a) and lower parts (1b, 3b) that are spaced from one another but arranged in essentially parallel planes. Methods include co-sputtering from multiple target arrangements to produce sputtered alloy layers on a Substrate, as well as alternately sputtering from different target arrangements to produce a plurality of sputtered layers on the substrate.</p> |
