| 摘要 |
Using a helium cryostat, the temperature for a substrate wafer(s) is redu ced to 2.2 Kelvin for twenty-four hours. A soak segment will hold the temper ature of the substrate wafer at 2.2 Kelvins for ninety-six hours. At such te mperatures, alloys such as GaAs, InP, and GaP will form dipole molecular mom ents, which will re-align along lines of internal magnetic force as molecula r bonds condense. The substrate wafer's temperature is ramped up to room tem perature over twenty-four hours. The temperature of the substrate wafer is r amped up to assure that the temperature gradients made to occur within the w afer are kept low. Typically, a temper ramp up temperature will range betwee n 300° F to 1100° F and depends upon the single crystal material used to con struct the substrate wafer. The substrate wafer undergoes a temper hold segm ent, which assures that the entire substrate wafer has had the benefit of th e tempering temperature.
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