A plasma composition for the selective etching of high-k materials,申请号EP20060123197-传众专利搜索

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发明名称	A plasma composition for the selective etching of high-k materials
摘要
申请公布号	EP1780780(A3)	申请公布日期	2008.12.17
申请号	EP20060123197	申请日期	2006.10.30
申请人	INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM ( IMEC)	发明人	SHAMIRYAN, DENIS;PARASCHIV, VASILE;DEMAND, MARC
分类号	H01L21/311	主分类号	H01L21/311
代理机构		代理人
主权项
地址

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