发明名称 |
ELECTRON EMISSION FROM A COLD CATHODE |
摘要 |
An electron emitter comprising a body of a wide band gap material using double injection space-charge limited current. By using double injection of carriers to establish space-charge limited currents in high resistivity p-type semiconductors, the number of minority carriers can be increased considerably without raising the Fermi level above mid band gap. By using such double injection space-charge limited current a sufficient amount of large energy minority carriers are placed in the conduction band in a p-type semiconductor. A monoatomic layer of cesium and oxygen is positioned on the positively biased contact. This places a negative electron affinity surface layer on the device. The electrons in the conduction band then have enough energy to impel electrons into a vacuum.
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申请公布号 |
US3872489(A) |
申请公布日期 |
1975.03.18 |
申请号 |
US19730335273 |
申请日期 |
1973.02.22 |
申请人 |
GTE LABORATORIES INCORPORATED |
发明人 |
HAGENLOCHER, ARNO K. |
分类号 |
H01J1/308;(IPC1-7):H01L3/08 |
主分类号 |
H01J1/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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