发明名称 ELECTRON EMISSION FROM A COLD CATHODE
摘要 An electron emitter comprising a body of a wide band gap material using double injection space-charge limited current. By using double injection of carriers to establish space-charge limited currents in high resistivity p-type semiconductors, the number of minority carriers can be increased considerably without raising the Fermi level above mid band gap. By using such double injection space-charge limited current a sufficient amount of large energy minority carriers are placed in the conduction band in a p-type semiconductor. A monoatomic layer of cesium and oxygen is positioned on the positively biased contact. This places a negative electron affinity surface layer on the device. The electrons in the conduction band then have enough energy to impel electrons into a vacuum.
申请公布号 US3872489(A) 申请公布日期 1975.03.18
申请号 US19730335273 申请日期 1973.02.22
申请人 GTE LABORATORIES INCORPORATED 发明人 HAGENLOCHER, ARNO K.
分类号 H01J1/308;(IPC1-7):H01L3/08 主分类号 H01J1/308
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