Driver circuit for high speed gating of a field effect transistor

摘要

A circuit for gating field effect transistors which is specifically advantageous for gating junction field effect transistors is disclosed. The circuit includes means for operating the gated or driven transistor in an ON state with a predetermined forward gate current, and alternately selectable means for operating the driven transistor in an ON state with a predetermined gate-source voltage which does not cause substantial gate current. The driver circuit can be realized in integrated circuit form wherein the desired operating mode is established by connection to a single circuit terminal.