Verfahren zum Herstellen von hochreinen Halbleitersubstanzen, insbesondere von Silizium,申请号DE1957ST12517-传众专利搜索

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发明名称	Verfahren zum Herstellen von hochreinen Halbleitersubstanzen, insbesondere von Silizium
摘要
申请公布号	DE1207922(B)	申请公布日期	1965.12.30
申请号	DE1957ST12517	申请日期	1957.04.30
申请人	STANDARD ELEKTRIK LORENZ AKTIENGESELLSCHAFT	发明人	WICKE DR. EWALD
分类号	C01B33/02;C30B11/12	主分类号	C01B33/02
代理机构		代理人
主权项
地址

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