发明名称 SELEKTIV BESTRALNING AV TYRISTORER
摘要 The dv/dt characteristics of a bidirectional thyristor are improved by irradiating selected portions of the device with high energy crystal lattice-damaging particles. In an exemplary embodiment, the commutating dv/dt of a triac is enhanced by the masked, selective irradiation of the boundaries between conducting portions and between the gate and the conducting portions.
申请公布号 SE7806393(A) 申请公布日期 1979.03.03
申请号 SE19780006393 申请日期 1978.05.31
申请人 * GENERAL ELECTRIC COMPANY 发明人 W W * SHENG;Y S E * SUN;E G * TEFFT
分类号 H01L21/322;H01L21/263;H01L29/74;H01L29/747;(IPC1-7):H01L21/26 主分类号 H01L21/322
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