发明名称 |
SELEKTIV BESTRALNING AV TYRISTORER |
摘要 |
The dv/dt characteristics of a bidirectional thyristor are improved by irradiating selected portions of the device with high energy crystal lattice-damaging particles. In an exemplary embodiment, the commutating dv/dt of a triac is enhanced by the masked, selective irradiation of the boundaries between conducting portions and between the gate and the conducting portions. |
申请公布号 |
SE7806393(A) |
申请公布日期 |
1979.03.03 |
申请号 |
SE19780006393 |
申请日期 |
1978.05.31 |
申请人 |
* GENERAL ELECTRIC COMPANY |
发明人 |
W W * SHENG;Y S E * SUN;E G * TEFFT |
分类号 |
H01L21/322;H01L21/263;H01L29/74;H01L29/747;(IPC1-7):H01L21/26 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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