Layered photoconductive element having As and/or Te doped with Ga, In or Tl intermediate to Se and insulator

摘要

A photosensitive material for electrophotography comprising a support having thereon a photoconductive layer and an electrically insulating layer, in which the photoconductive layer is a vacuum-deposited film substantially comprising Se with a surface layer portion of the vacuum-deposited film contacting the electrically insulating layer containing, within a thickness of about 10 mu or less, about 1 to about 50% by weight of As and/or Te and about 0.5 to about 1000 ppm of at least one element of Group IIIb of the Periodic Table.