| 摘要 |
PURPOSE:To produce a high voltage power from a single photovoltaic element by laminating a plurality of amorphous silicon layer unit cells having n-type, i-type and p-type on a conductive substrate, and forming a conductive layer on the uppermost portion thereof as a photovoltaic element. CONSTITUTION:A stainless steel substrate 23 is arranged in reaction container, which is evacuated to a vacuum of approx. 10<-6> Torr., and a mixture gas of SiH4, PH3 and H2 is fed to the container. Then, a glow discharge is created between an anode and a cathode provided in the container, and an n-type amorphous silicon layer 28 is grown on the substrate 23. Thereafter, an i-type amorphous layer 29 is grown on the layer 28 using a mixture gas of SiH4 and H2 while interrupting the discharge, B2H6 is contained in the mixture gas, a p-type amorphous layer 30 is laminated thereon as a unit cell 24. Then, unit cells 25, 26 are formed similarly, connected in series, a transparent electrode film 27 is coated on the outermost layer 36, and a solar light 37 is incident thereto. |
