发明名称 MAGNETO-RESISTIVE EFFECT TYPE THIN FILM MAGNETIC SENSOR
摘要 PURPOSE:To improve accuracy for temperature compensation by disposing a permanent magnet in a close contact with a magneto-resistance effect sencor in a compensating region for temperature. CONSTITUTION:A magneto-resistive element 2 in a sensing region and a magneto resistive element 3 in a compensating region for temperature are so arragned that their axes are perpendicular to each other. By a permanent magnet 9 disposed above the element 3 and by a strong magnetic field 10 of the magnet 9 applied on the element 3, a current flowing in the element 3 is confined in a direction 8 far from the axial line. Accordingly with a resistance of the element 3 being kept constant by an external signal magnetic field, a thin film magnetic sensor which has a good temperature compensation and linearity is obtained. Besides when a permanent magnet 11 is formed by thin film deposition method on the magneto resistive element 3 of the temperature compensation region so as to take a same form, a magnetic flux leaking outside is made very low. Besides, when a magnetized direction of the permanent magnet 11 and an axis of easy magnetization of the element 3 are brought into a coincidence, a magnetization direction of the element 3 is stabilized and confined referring to a magnetization signal, and a bias magnetic field is unnecessary for the element 2.
申请公布号 JPS5783074(A) 申请公布日期 1982.05.24
申请号 JP19800158823 申请日期 1980.11.13
申请人 CANON KK;KIYANON DENSHI KK 发明人 ABIKO SHIYUUZOU;GOTOU HIROICHI;NIIMI AKIRA;TAKAGI HIROTSUGU;SAWADA TAKESHI;YONEDA HIROSHI
分类号 H01L43/08;G01R33/09;(IPC1-7):01L43/08 主分类号 H01L43/08
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