| 摘要 |
PURPOSE:To prevent semiconductor device properties from deterioration to the extent where the device remains virtually serviceable by a method wherein two protective films respectively of P silicate glass and Si nitride are formed on the upper surface of a semiconductor chip wiring layer except where a through hole is provided. CONSTITUTION:A metal wiring 2 is built on an MOS type semiconductor substrate 1, whereupon a 0.1-1.0mum thick P silicate glass layer 3 containing 1- 6mol% of P glasses is formed. Then a 0.3-1.0mum Si nitride film 4 is piled thereon, using the plasma CVD technique. This procedure prevents the semiconductor device from deterioration as to its properties to the extent where it remains virtually serviceable thanks to barrier effect created against such contaminants as Na and the like. |
