| 摘要 |
PURPOSE:To prevent malfunction by forming the gate electrode and a dummy gate electrode to an auxiliary thyristor gate electrode at a regular interval and adding the dummy gate electrode to the gate electrode while measuring the characteristics of control. CONSTITUTION:The dummy gate electrodes 5', 5'' are shaped onto a gate region PB through evaporation at the same time as the evaporation of aluminum at time of the formation of the gate electrode 5, and patterned at regular intervals to the auxiliary thyristor gate electrode 4. An aluminum wire 6 is approached to the gate electrode 5 and bonded, a bonding section 6a is formed and electrical characteristics are measured, the dummy gate electrode 5' is bonded by the aluminum wire 16 when gate current value is close to a lower limit within the allowable range, and a bonding section 6a' is shaped. The next dummy gate electrode 5'' is also added as a gate electrode as necessary. |
