| 摘要 |
PURPOSE:To prevent disconnection of a wiring by a method wherein insulator layers between wiring structures are formed of low melting point glass thereby realizing flat insulator layer surfaces. CONSTITUTION:Wiring structures A1, A2, A3, and A4 consisting of insulator layers 5 and wiring conductor layer 6 placed thereon are successively piled on a semiconductor substrate B provided with transistor constituting semiconductor regions 1, 2, and 3. The insulator layer 5 of the wiring structure A1 is a lamination of insulator layers 5a and 5b. The insulator layer 5a is an SiO2 layer and the insulator layer 5b is a P glass layer. The wiring conductor layers 6 of the wiring structures A1 and A2 are Mo layers, those of the wiring structures A3 and A4 are Al layers, the insulator layers 5 of the wiring structures A2 and A4 are SiO2 layers, and the insulator layer 5 of the wiring structure A3 is a glass layer with a low melting point of not higher than 1,000 deg.C. Heat treatment of the insulator layer 5 of the wiring structure A3 makes the top surface flat. |
