| 摘要 |
PURPOSE:To form a fine resist pattern having high reliability, by providing an etchable lower part layer and a specific resist layer on a substrate and developing with plasma after exposing to ionizing radiation and making an etching the lower part layer with plasma. CONSTITUTION:An etchable substance (e.g. polystyrene) is applied with plasma on a substrate 1 to form a lower part layer 2, and a resist composition consisting of a (co)polymer of a monomer expressed in a formulaIor II (R is C1-6 alkyl and benzyl, etc.) and 1-50wt% Si compound expressed in a formula III (X is methyl, phenyl etc.; Y is H, hydroxy etc.; Z is t-butyl, halogen, etc.) is applied on the layer 2 to form a resist layer 3. Then, the resist layer 3 is exposed to ionizing radiation and relief-treated and an Si compound of an exposed part of the layer 3 is removed and then the unexposed part of the layer 3 is removed after treating with plasma, and the lower part layer 2 is etched with plasma to form a resist pattern. |
