| 摘要 |
PURPOSE:To realize a uniform vapor phase growing speed by heating wafers from front and rear surfaces by a method wherein the heating section of a successive vapor phase growing unit consists of two heating sections, one travelling through the growing section with semiconductor wafer mounted on its top and the other, positioned over the first, being installed face down in non contact manner with the wafers. CONSTITUTION:Heat shielding screens 7 and 7' that are heat resisting belts are arranged between take-in rollers 8 and 8' provided at the both ends of the unit. Sliding on the screens 7 and 7' is a traveling heating section 3 driven by a screw-and-threaded rod means, mounted with semiconductor wafers 4 and 4'. The heater section 3 goes through the vapor phase growing section 1 provided with gas inlet and outlet ports 2 and 2' for vapor phase growth. Further, stationary heating sections 6 and 6' are provided face down at the both ends of the growing section 1, not in contact with the wafers 4 and 4', warming them from front and n rear. This setup prevents the wafers from bending and temperatures are kept uniform across the entire surface. |
