| 摘要 |
PURPOSE:To obtain a pattern, accuracy thereof is high and residual-film thickness thereof is ensured, by executing electron-beam drawing on the basis of the size corrected of the pattern and the quantity of irradiation. CONSTITUTION:The quantity of size corrected S is grasped to the pattern 2lmum square, the size of the pattern is corrected (contraction), and the pattern 2Mmum square is exposed by the quantity of irradiation Q1, thus obtaining an aimed residual-film rate t1 and 2lmum pattern size. The spraed (proximity effects in the patterns) of the patterns by the pattern drawing of pattern themselves is corrected, the quantity of size corrected S1 and the quantity of irradiation Q2 are obtained so as to be made to reach the aimed residual-film rate, and size is shrunk as shown in a broken line. The patterns are drawn by the quantity of irradiation Q2, and size is shrunk by S2 as shown in a dot-broken line in consideration of the effects (proximity effects among the patterns) of peripheral patterns so as to be made to reach size designed. |
