| 摘要 |
PURPOSE:To process a thin-film on a ground substrate with a stepped difference finely with high accuracy without leaving a section not etched by preferably etching a two layer film at a stepped difference section through isotrpic etching first and etching the film in an anisotropic manner when etching the two layer film. CONSTITUTION:A polysilicon film 2 is fomed on the foundation substrate 1 with the stepped difference, a molybenum-silicide film 3 is formed on the film 2, and the pattern of a resist 4 is formed. When a mixed gas of carbon tetrafluoride and oxygen is introduced into a barrel type chamber and glow-discharged and the two layer film is etched in an isotropic manner by plasma generated, the stepped difference section is etched preferably. When a mixed gas of carbon tetrachloride and oxygen is introduced into a chamber with a parallel plate type electrode and the surface is reactive-ion etched, fine processing without leaving the section not etched is enabled to the stepped difference section. |
