| 摘要 |
PURPOSE:To prevent a semiconductor device from side etching to be generated at dry etching time by a method wherein unnecessary patterns for operation of a circuit are formed. CONSTITUTION:The reactive sputter etching method using gas mainly consisting of boron trichloride is adopted as the method to form the Al wiring of the semiconductor integrated circuit. The patterns 2 unnecessary for operation of the circuit are supplemented to the Al wiring 1 necessary for operation of the circuit and occupying the chip area forming the integrated circuit, and after etching is performed, the remaining Al area is made to 65% or more. The reducing quantity of size of the pattern after etching as compared with size of an etching mask depends upon the density of the pattern, and the denser the pattern is the more the side etching phenomenon is reduced. |
