| 摘要 |
This invention relates to production of solid state devices by a process which includes at least one pattern delineation step involving dry etching of a negative resist deposited as a film on a substrate and obtained by mixing a host polymer with one or more monomers capable of being locked into place by electromagnetic radiation. The film is selectively irradiated, fixed, for example by heating or vacuum or both, to remove unlocked monomer or monomers from the film, and etched by means of an oxygen-containing plasma. The rate of removal is higher in the unirradiated region than in the irradiated region, yielding a negative resist pattern. A sensitizer may be added to allow use of various radiation wavelengths. Desirable properties of monomer and host polymer materials are discussed, and exemplary specific compositions given of aromatic monomers, silicon-containing monomers, and chlorinated polymers. |
