| 摘要 |
PURPOSE:To form simultaneously a positive type pattern and a negative type pattern with high resolution by moving the pattern position to a resist film which permits the formation of the positive pattern when irradiated with a small quantity of UV light and the formation of the negative pattern when irradiated with about two-fold quantity thereof, and performing stepwise different irradiation. CONSTITUTION:The compd. which is expressed by the formula (A is O, S, S2, SO2, CH2 or the substd, group of H, X is H, Cl) and is cross-linked by far ultraviolet light is mixed with a compd. which is an o-naphthoquinone diazide positive type resist and is solubized by UV in a 0.1-50pts.wt. range based on 100pts.wt. said compd. to prepare a soln. Said soln. is coated on a base such as silicon wafer and is dried by heating, whereby a resist layer is formed. The 1st UV light irradiation is first performed to such resist layer by using a mask having a line and space, then the mask is moved parallel by 1/2 of the line or the line width of the space, and the 2nd irradiation is performed thereto to produce a positive type undissolved part in the unirradiated part, a dissolved part (positive) in the 1st irradiated part and a negative type undissolved part in the 2nd irradiated part. Such resist layer is developed, whereby both negative and positive patterns are formed. |
