| 发明名称 |
Method of plasma etching of films containing chromium |
| 摘要 |
A method of etching a thin film containing chromium using fluorine or a fluorine containing compound without leaving an electrically conductive residue is described.
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| 申请公布号 |
US4445966(A) |
申请公布日期 |
1984.05.01 |
| 申请号 |
US19830505624 |
申请日期 |
1983.06.20 |
| 申请人 |
HONEYWELL INC. |
发明人 |
CARLSON, ROBERT J.;YOUNGNER, DANIEL W. |
| 分类号 |
H01L21/3213;(IPC1-7):C23F1/02;B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
H01L21/3213 |
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