发明名称 METHOD AND DEVICE FOR PLASMA ETCHING
摘要 PURPOSE:To enable precision plasma etching with good efficiency and high uniformity by interposing an insulating flat plate having many fine holes between a lower electrode to be placed thereon with an object to be treated and an upper electrode disposed oppositely thereto. CONSTITUTION:An electronic part forming material having a resist pattern is placed on a lower electrode 4 and an insulating flat plate 5 consisting of a ceramic, etc. having many fine holes is interposed, via supports 8 and 8' between an upper electrode 3 and the electrode 4, then a high frequency voltage is impressed on the electrode 3 and the plasma etching of the above-mentioned material is performed, in a plasma etching device consisting of a bell-shaped cover part 1, a bottom plate 2 attached with the electrode 4 and disposed with the electrode 3 oppositely to the electrode 4. The active seed of the above-mentioned material arriving at the object to be treated is adequately suppressed by the above-mentioned constitution, whereby precision etching having high uniformity is obtd., the damage of the resist, etc. is prevented, hence treating electric power is increased and high speed etching is made possible.
申请公布号 JPS59126778(A) 申请公布日期 1984.07.21
申请号 JP19830001792 申请日期 1983.01.11
申请人 TOUKIYOU DENSHI KAGAKU KK 发明人 HIJIKATA ISAMU;UEHARA AKIRA;NAKANE HISASHI
分类号 C23F4/00;H01J37/32;H01L21/302;H01L21/3065 主分类号 C23F4/00
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