发明名称 Semiconductor device and method for manufacturing the same
摘要 A semiconductor device includes cylindrical capacitors each including corresponding cylindrical electrodes. Each cylindrical electrode includes hemispherical silicon grains. The hemispherical silicon grains protruding from an upper region of the cylindrical electrode have a large size, and the hemispherical silicon grains protruding from a lower region of the cylindrical electrode have a small size or the lower region of the cylindrical electrode has no hemispherical silicon grains.
申请公布号 US2006022251(A1) 申请公布日期 2006.02.02
申请号 US20050165034 申请日期 2005.06.24
申请人 KITAMURA HIROYUKI;TOGASHI YUKI;KITAJIMA HIROYASU;IKEDA NORIAKI;NAKAMURA YOSHITAKA;KAKEHASHI EIICHIRO 发明人 KITAMURA HIROYUKI;TOGASHI YUKI;KITAJIMA HIROYASU;IKEDA NORIAKI;NAKAMURA YOSHITAKA;KAKEHASHI EIICHIRO
分类号 H01L29/94;H01L21/20 主分类号 H01L29/94
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