| 摘要 |
PURPOSE:To enable to integrate a semiconductor memory cell by connecting one of a pair of ohmic electrodes formed on double layer made of two types of semiconductors having different electron affinity to a bit line and the other to a word line. CONSTITUTION:After an electron storage layer 22, an electron supply layer 23 and an electrode contacting layer 24 are formed on a substrate 21, mesa etching is executed until reaching the substrate 21. The layers 22, 23 employ those having different electron affinity. A strip hole 25 is formed at the center region of the layer 24 to isolate a source electrode contacting layer 241 and a drain electrode contacting layer 242, and a source electrode and bit line 26 are formed. After an insulating layer 31 is further formed, a hole is opened at the layer 242, and a drain electrode and word line 27 is selectively formed. In this manner, one memory cell is formed by one member, thereby integrating the cell. |
