| 摘要 |
PURPOSE:To obtain an electrostatic latent image bearing material not deteriorated in resistance even after a large number of electrostatic charging cycles and requiring no surface polish by forming 2 photoconductive layer made of amorphous silicon doped with O and B higher in their content in the layer lacated farther from the surface of a substrate than the layer nearer to the substrate. CONSTITUTION:The about 20mum thick first amorphous silicon photoconductive layer 2 doped with a prescribed amt. of O and B is formed on the ultrapolished surface of an aluminum cylindrical substrate 1. On this layer 2, the 0.1-2mum thick second photoconductive amorphous silicon layer 3 doped with O and B higher in content than the layer 2. The higher content of O and B in the layer farther from the substrate does not deteriorate the resistance of the surface of the electrostatic latent image bearing material after many repeated cycles of charging, and therefore, troublesome work, such as polishing the surface of the image bearing material, is made unnecessary. |
