| 摘要 |
PURPOSE:To accelerate the speed of a C-MOS by forming a polycrystalline silicon layer of gate electrode in reverse conductive type to the conductive type of the opposed channel region, thereby performing an enhancement type MOS transistor. CONSTITUTION:A P type buried channel region 8, in which boron ions are implanted to the surface of an N type silicon substrate 6, is provided, while an N type buried channel region 9, in which arsenic ions are implanted to the surface of a P-well 7 is provided. Gate electrodes are respectively formed on both channel regions 8, 9 through a gate insulating film 3. A double layer formed of phosphorus-doped N type polycrystalline silicon layer 2 and a tungsten layer 10 are formed on the gate electrodes on the region 8. On the other hand, a gate electrode formed of a boron-doped P type polycrystalline silicon film 1 and a tungsten layer 10 is formed on the region 9. The source, and drain regions 4, 5 of both MOS transistors are formed. |
