A method of producing a semiconductor structure on a substrate and a semiconductor device manufactured thereby.

摘要

A method and structure for producing a vertically built MOS structure which permits the out diffusion of dopant from a layer of chemically deposited (CVD) doped oxide (173, 174) into a layer of CVD laser recrystallized polysilicon (190) is disclosed. This out diffusion is accomplished during a high temperature oxidation treatment of an intermediate structure. Source and drain mask alignment is chosen such that this out diffusion of dopant from the CVD glass at its boundary limit will meet with a diffusion of implanted ions. This process makes possible minimal overlap of the drain and source zones with the gate, thus reducing coupling capacitance while providing increased packing density.