| 摘要 |
<p>A method for manufacturing structures having dimensions in a range of 1 mu m and below in a layer of material by applying an auxiliary layer consisting of metal or metal oxide on the layer to be structured and utilizing a lacquer mask to structure the auxiliary layer to form a mass therein for the etching of the layer to be structured, characterized by passivating the auxiliary layer by applying a protective layer to prevent oxidizing of the auxiliary layer until a desired time. The protective layer can be gold or platinum and the auxiliary layer can be selected from a group consisting of titanium, hafnium, zirconium, vanadium, chromium, manganese, aluminum, niobium and tantalum. The method is particularly useful to manufacuture absorber structures of X-ray masks that are used in microelectronics.</p> |
