| 摘要 |
PURPOSE:To obtain an image sensor of the adherent type greatly improved in speeds to respond to light, in distinguishing between light and shade, and in sensitivity to light by a method wherein a photoelectric transducer of a pin diode structure is driven under an inverted bias. CONSTITUTION:An Al coating is deposited by evaporation on a substrate 1 made of pyrex, and a common electrode 2 and lower-layer wiring 6 for a matrix wiring are patterned. Next, a p type amorphous Si layer is laid. Thereafter, amorphous Si films of the i- and n types are deposited for the formation of semiconductor layers 3, 5. A process follows wherein an SiO2 film 9 is formed on these semiconductor layers and matrix wiring, and is then provided by etching with through-holes 10, 11. Between the photoelectric transducing section 3 and the diode section 5 on the insulating film 9, an ITO layer is laid to serve as individual electrodes, and then an Al layer as the upper wiring for the matrix wiring is deposited, both by evaporation. Finally, a photoelectric transducing section is built, composed of 1,024 picture elements. All the terminals are connected to a driving circuit for the real-time readout of image signals at RL. |
