| 摘要 |
PURPOSE:To prevent any leak current from increasing while forming a channel stopper layers by a method wherein a CVD film is diffused between a field insulating layers and source, drain layers. CONSTITUTION:A substrate 7 with field insulating layers 8 buried in the surface of a P type silicon substrate 7 is formed. Firstly CVD-BSG films 9 containing the first impurity is formed covering source-drain forming regions 10a, 10b toward the layers 8. Secondly simultaneously with forming a gate oxide film 12, the impurity is thermal-diffused from the film 9 to form P-plus channel stopper layers 11a, 11b between the layers 8 and the regions 10a, 10b. Then a source 14a and a drain 14b are formed by selfmatching with a gate electrode 13 and adding the second impurity and finally an insulating film 15 is formed and a contact hole is opened. |
