| 摘要 |
PURPOSE:To realize a low cost and highly reliable semiconductor device for wire junction by a method wherein, when a wire junction of the lead frames and the Ag globules is performed using Ag wires, the wire junction is performed in an active atmosphere, and at the same time, after a thermal pressure-welding was peformed, the heat oxidation of the Ag globules is prevented. CONSTITUTION:In active gas or reducing gas is made to jet from thje holes 6 of a lead frame retainer 4, and the thermal oxidation of Ag globules 8 provided on a semiconductor element 7 connected with lead frames 9 is prevented. Or, after the wire junction, whichis performed using Ag wires, a method, wherein generated oxides are removed by performing a thermal treatment in an inactive or reducing atmosphere or in a vacuum, can be also applied. According to this constitution, a highly reliable wire junction can be performed using Ag wires even through Au wires are not used for the wire junction. |
