| 摘要 |
PURPOSE:To form depth of the element isolation region of a semiconductor device finely and moreover deeply by a method wherein the patterns of semiconductor layers having perpendicular side walls consisting of the [100] crystal surface orientation are formed on an Si single crystal substrate having the [100] crystal surface orientation, and insulating films are formed on the side walls thereof. CONSTITUTION:Three layers insulating films consisting of thermal oxide films 32, Si nitride films 33 and Si oxide films 34 are formed on a P type Si substrate 31 having the [100] crystal surface. Then the substrate 31 is etched using the films 34 as masks to form the perpendicular wall surfaces of dug hole parts, and thermal oxide films 35 and Si nitride films 36 are formed only on the side walls of the dug hole parts. Then when Si epitaxial films 37 are grown in the dug hole parts, a flat surface can be obtained. Then after the films 34 are removed, thermal oxide films 38 and Si nitride films 39 are formed, and formation of a pattern is performed. Then selective thermal oxide films 40 are formed. Then the films 33, 39 and the films 32, 38 are removed. Then after gate oxide films 41 are formed, polycrystalline Si gates 43 are formed, and source.drain regions 44 are formed. According to this method, widths of the element isolation regions can be formed finely and moreover deeply. |
