| 摘要 |
<p>1,078,790. Resistors; semi-conductor integrated circuits. NIPPON ELECTRIC CO. Ltd. Nov. 18, 1965 [Nov. 20, 1964], No. 49089/65. Headings H1K and H1S. A resistor element is formed by providing a suitably shaped layer of a deoxidizing metal (e.g. aluminium, magnesium or chromium) on a silicon oxide film and causing the former to react with the latter by heat treatment. The resistance value is determined by selection of the treatment temperature (600-800‹ C.), the thickness of the metal layer and its shape (Fig. 7, not shown). A silicon dioxide film may be formed by steam oxidization of a silicon substrate or the substrate may be of germanium, ceramic, glass or quartz. The metal layer may be deposited through a mask or etched. After formation of the resistive layer by heat treatment electrodes are formed by deposition and etching. The current path through the resistive element may be perpendicular to its surface in which case the substrate is conductive and the resistive layer extends through to the substrate (Fig. 8, not shown). The silicon or germanium substrate may incorporate a PN junction wherein the resistance element may additionally include a second reacted layer and the P-type layer. A further embodiment comprises an integrated circuit having an NPN transistor 30, 31, 32 (Fig. 11) with reacted layers 24, 25, 26 forming resistors in the collector, base and emitter circuits.</p> |
