| 摘要 |
PURPOSE:To obtain a thin film having excellent crystalline property without a grain boundary and the like, by scanning an energy beam in the direction so that a linking part of an island region and a heat radiating strip region is located at the downstream side, fusing a semiconductor thin film, cooling the film, and recrystallizing the film. CONSTITUTION:An Ar laser light emitting region 5 is moved in a scanning direction 4. In a strip region 2, only a projected part 2b is in a fused state. A part 2c, on which the light has been already projected, is cooled and solidified relatively quickly. A grain boundary GB and a sub-grain boundary SGB are yielded. Meanwhile, in an island region 1, not only the projected region 1b but also the region 1a, on which the light gas been already projected, are in the fused state for the time being. As shown in the Figure D, after the entire island region 1 has been scanned by the laser light, heat energy accumulated in the island region 1 is moved to the strip region 2 through a linking part 2. In the island region 1, recrystallization spreads in the direction shown by arrows 6 from a small part, which is contacted with the linking part 3. The entire island region 1 is made to be a single crystal. The grain boundary GB, the sub-grain boundary SGB and the like are not yielded. |
