| 摘要 |
PURPOSE:To accelerate the transition velocity by irradiating UV light, and further giving a thermal effect by infrared rays or a visible ray laser when a phase-changing recording medium is transformed from an amorphous state to a crystalline state. CONSTITUTION:An Se-Te-Sn or an Te-O-Ge-Sn recording film 2 is formed on a PMMA substrate or a quartz substrate 1 by a sputtering or a vapor deposition process, and the two obtained materials are adhered to each other with an epoxy resin, etc. 3. A semiconductor laser 4 of 830mm wavelength and an UV light laser 5 are simultaneously irradiated through a lens 6 and an interference filter 8. Consequently, the recording film is transformed from an amorphous to a crystalline state, and the phase changing velocity is increased by 2-3 times that of conventional processes, the recording frequency is increased by 2-3 times, or the erasing time is reduced to 1/2-1/3 of that of the conventional process.
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