| 摘要 |
PURPOSE:To improve the quality of a film formed on a substrate by placing a substrate side magnet as well as a target side magnet so as to increase the uniformity of sputtering from the surface of a target and the rate of sputtering. CONSTITUTION:A magnet 11 is placed behind a substrate 6 in a sputtering apparatus. The magnet 11 generates a magnetic field on the surface of the substrate 6 parallel to the surface of a target 7 in the plasma generating region between the target 7 and the substrate 6. The direction of the magnetic field coincides with the direction of a magnetic field generated by a cathode 5 side magnet 4. The substrate side magnet 11 may be similar in shape and structure to the target side magnet 4.
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