| 摘要 |
PURPOSE:To enhance electric, optical and photoconductive characteristics and to obtain excellent use-circumstance change resistance characteristics by incorporating oxygen in a uniform distribution in at least one layer region of two amorphous silicon type light receiving layers consisting respectively of specified compsn. formed on a substrate. CONSTITUTION:The first layer 102 made of a-SiGe(H,X) and on this layer the second layer 103 made of a-Si contg. C and a conductivity governing substance are laminated on the substrate 101 to form the light receiving layer and a part or the total of the layer region of one of the layers 102, 103 contains oxygen in a uniform distribution and the addition of Ge in the layer 102 in a uniform distribution permits absorption spectrum characteristics in the longer wavelength region to be enhanced, photosensitivity to be especially enhanced in the whole visible wavelength region, matching with semiconductor laser beams to be improved and optical responsivity to be enhanced. Further, the addition of C to the structure of the layer 103 permits the light receiving member to be enhanced in each of humidity resistance, successive repeated use resistance, high voltage resistance, use circumstance change resistance characteristics and durability to be enhanced and the addition of conductivity governing substance permits residual potential to be prevented and consequently, images high in quality to be obtained stably for a long period. |
