| 摘要 |
PURPOSE:To increase the process margin of recrystallizing condition by providing an insulative dielectric region of buried type in the partial exposed part on the surface of a substrate, forming a conductor film thereon, emitting an energy beam, thereby preventing a seed from dissipating the heat. CONSTITUTION:After an SiO2 film 11 is grown on the surface of a single crystal Si substrate 10, an exposed part 11a having no oxide film is formed on the surface of the substrate. High density oxygen ions are implanted from above the exposed part to form a buried SiO2 film (dielectric region) 12. The buried film is connected with the film 11, and a single crystal seed 10A separated from the substrate 10 is formed. After a polycrystalline or an amorphous Si film 13 is coated on the film 11 in this state, an Si film 13 is emitted with an energy beam 4, and scanned in a direction of an arrow while heating. The Si film 13A part is matched to the surface of the substrate at this time to be single-crystallized to exhibit the same crystalline surface and extended in the scanning direction as the scanning progresses, thereby single-crystallizing the film 13 in the same azimuth in the substrate as a whole. |
