| 摘要 |
PURPOSE:To prevent the decline in velocity consequent on an increase of temperature by specifying an impurity concentration of an N-type layer by using the N-type layer as a load resistance. CONSTITUTION:An impurity transmitting part for forming a resistance is provided in an insulating film 18 such as of silicon oxide covering an N<-> type part 16 surrounded with an insulating film 14. N-type determined impurity is diffused or ion-implanted preferentially into the part 16 through said impurity transmitting part so as to form an N-type layer for a load resistance. An impurity concentration of the N-type layer 20 is specified. Then, such positive temperature coefficient that almost cancels out the negative temperature coefficient of a forward voltage of a transistor can be obtained. Accordingly, the decline in velocity consequent on an increase of temperature can be prevented. |
