| 摘要 |
PURPOSE:To form a prescribed pattern with designed dimensional accuracy by forming a film of a specified resist material contg. silicon on a substrate to be processed, irradiating high energy beams on the resist film and decomposing and evaporating the irradiated part of the resist material. CONSTITUTION:A film of a resist material contg. silicon obtd. by (co) polymerizing at least one kind of substituted acetylene compound represented by the formula is formed on a substrate to be process, high energy beams are irradiated on the resist film, and the irradiated part of the resist material is decomposed and evaporated. The preferred silicon content in the resist material is >=10wt%. In the formula, R1 is (un)substituted silyl and R2 is H, an (un)satd. aliphatic group, an (un)substituted aromatic group or (un)substituted silyl, and these are same or different each other. |
