| 摘要 |
PURPOSE:To obtain a high-quality single crystal having improved uniformity of composition, etc., with hardly any crystal defect, by providing a vapor transport controlling part and gas stream regulation part of specific structure between a holding part for a crystal raw material and a crystal growth part. CONSTITUTION:A raw material 13 for producing a single crystal is put in an inner vessel and a capillary vapor transport controlling part 14 is fitted thereon. A gas stream regulation part 17 containing a material, e.g. air-permeable fibrous material, etc., having many fine interstices is provided thereon, put in an outer vessel 11 and placed on a furnace table 24 of an electric furnace 22. The inner vessel 12 is then heated to produce vapor 18 of the raw material 13 for the crystal. The flow of the vapor 18 is limited by the vapor transport controlling part 14 and then passed through the gas stream regulation part 17 to extend the flow cross-sectional area of the vapor 18. The flow of the vapor 18 is uniformly adjusted at the same time and the temperature difference between the gas stream regulation part 17 and a crystal growth part is further reduced. The final raw material vapor 19 is then brought into contact with a seed crystal 20 to grow the aimed crystal.
|
