| 摘要 |
PURPOSE:To form flat buffer layers by a method wherein the first buffer layer, as it is exposed, is not heat-treated at high temperature not to be formed into a three dimensional insular. CONSTITUTION:The first buffer layer 2 is thinly grown at low temperature to be heat-treated at a temperature higher than the growing temperature of the buffer layer 2 but lower than the normal epitaxial temperature. After the heat-treatment, the buffer layer 2 is cooled at low temperature. Then, the second buffer layer 3 is grown on the first layer 2 at the temperature higher than the growing temperature of the buffer layer 2 but lower than the normal epitaxial temperature. Both of the buffer layer 2 and 3 are heated up to the normal epitaxial temperature higher than the growing temperature thereof to grow a semiconductor thin layer 4 on the second buffer layer 3. Thus, the heat treatment process of the buffer layer 2 only by heating up to the normal epitaxial temperature is not included. Therefore, the buffer layer 2 does not change three-dimensionally and insularly. Through these procedures, flat layers 2 and 3 can be formed.
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